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SI4500BDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 6.6A 8-SOIC
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Inventory: 10044
Minimum: 1
Total Price: USD $8.46
Unit Price: USD $8.457803
≥1 USD $8.457803
≥10 USD $6.939608
≥100 USD $6.72315
≥500 USD $6.505695
≥1000 USD $6.289238
≥3000 USD $5.638868

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Technical

Packaging Cut Tape (CT)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 1.3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4500
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Turn On Delay Time 20 ns
FET Type N and P-Channel, Common Drain
Rds On (Max) @ Id, Vgs 20m Ω @ 9.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.6A 3.8A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Rise Time 35 ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 35 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 9.1A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6.6A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Alternative Model

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