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SI6981DQ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 20V 4.8A 1.14W 31mohm @ 4.5V
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Inventory: 3038
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.499748
≥1 USD $0.499748
≥10 USD $0.409973
≥100 USD $0.398003
≥500 USD $0.385035
≥1000 USD $0.372068

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 31mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 830mW
Terminal Form GULL WING
Base Part Number SI6981
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.14W
Turn On Delay Time 35 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 300μA
Current - Continuous Drain (Id) @ 25°C 4.1A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 4.5V
Rise Time 55ns
Fall Time (Typ) 52 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) -4.8A
Threshold Voltage -900mV
JEDEC-95 Code MO-153
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4.1A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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