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SI9934BDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 12V 6.4A 2.0W 35mohm @ 4.5V
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Inventory: 21729
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.08778
≥1 USD $0.08778
≥10 USD $0.07182
≥100 USD $0.069825
≥500 USD $0.06783
≥1000 USD $0.064838
≥10000 USD $0.058853

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 250
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI9934
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 19 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 35m Ω @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 4.8A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.4 V

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