Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
HTS Code 8541.29.00.95
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.7A 3.4A
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 55V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 4.7A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 38A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 72 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate