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SI4544DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 30V 8-SOIC
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Max Power Dissipation 2.4W
Terminal Form GULL WING
JESD-30 Code R-PDSO-G8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Turn On Delay Time 13 ns
FET Type N and P-Channel, Common Drain
Rds On (Max) @ Id, Vgs 35m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 20A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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