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SI4943BDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 20V 6.3A 8-SOIC
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Inventory: 16946
Minimum: 1
Total Price: USD $1.8
Unit Price: USD $1.79949
≥1 USD $1.79949
≥10 USD $1.477298
≥100 USD $1.430415
≥500 USD $1.38453
≥1000 USD $1.338645

Technical Details

Supply Chain

Factory Lead Time 32 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Pure Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4943
Pin Count 8
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 11 ns
Power - Max 1.1W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 6.3A
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Rise Time 10ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) -8.4A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.3A
Drain-source On Resistance-Max 0.019Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

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