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SI4916DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 10A 8-SOIC
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Inventory: 39150
Minimum: 1
Total Price: USD $0.38
Unit Price: USD $0.37506
≥1 USD $0.37506
≥10 USD $0.308228
≥100 USD $0.298253
≥500 USD $0.288278
≥1000 USD $0.2793

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series LITTLE FOOT?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 18mOhm
Subcategory FET General Purpose Power
Max Power Dissipation 3.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI4916
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power - Max 3.3W 3.5W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 10A 10.5A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Continuous Drain Current (ID) 10.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 10A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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