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SI4923DY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 30V 6.2A 8-SOIC
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Inventory: 1584
Minimum: 1
Total Price: USD $1.74
Unit Price: USD $1.742633
≥1 USD $1.742633
≥10 USD $1.429418
≥100 USD $1.385528
≥500 USD $1.34064
≥1000 USD $1.295753

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 15 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 135 ns
Continuous Drain Current (ID) 6.2A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.021Ohm
Drain to Source Breakdown Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.5494mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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