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SI5905DC-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 8V 3A 1206-8
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Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 90mOhm
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI5905
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 90m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250μA (Min)
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Rise Time 45ns
Fall Time (Typ) 45 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3A
DS Breakdown Voltage-Min 8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

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