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SI6993DQ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-TSSOP (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 30V 3.6A 8-TSSOP
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Inventory: 1013
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.080063
≥1 USD $0.080063
≥10 USD $0.077708
≥100 USD $0.075353
≥500 USD $0.072409

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 830mW
Terminal Form GULL WING
Base Part Number SI6993
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 830mW
Turn On Delay Time 13 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 4.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.6A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 14ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) -4.7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.6A
Drain-source On Resistance-Max 0.031Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Alternative Model

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