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SI7964DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 60V 6.1A PPAK SO-8
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Inventory: 8021
Minimum: 1
Total Price: USD $2.43
Unit Price: USD $2.430908
≥1 USD $2.430908
≥10 USD $1.995
≥100 USD $1.933155
≥500 USD $1.870313
≥1000 USD $1.808468

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8 Dual
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Subcategory FET General Purpose Powers
Max Power Dissipation 1.4W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI7964
Pin Count 8
JESD-30 Code R-XDSO-C6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 23m Ω @ 9.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 6.1A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.023Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 31 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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