Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2013
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 100W
Terminal Form C BEND
Base Part Number SIZ920
JESD-30 Code R-PDSO-C6
Number of Elements 1
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 39W 100W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.1m Ω @ 18.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 40A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 70A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard