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MP6K12TCR

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package 6-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 5A MPT6
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-SMD, Flat Leads
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 2W
Base Part Number *K12
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 5A
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.063Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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