Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.95
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.3A
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 4.3A
Drain-source On Resistance-Max 0.09Ohm
Pulsed Drain Current-Max (IDM) 17A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate