Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature HIGH RELIABILITY
HTS Code 8541.29.00.95
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.3A
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 30V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 4.9A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate