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DMN3032LE-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 5.6A SOT223
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Inventory: 141301
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.53592
≥1 USD $0.53592
≥10 USD $0.458304
≥100 USD $0.318595
≥500 USD $0.248741
≥1000 USD $0.202181

Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Supplier Device Package SOT-223

Technical

Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Base Part Number DMN3032
Power Dissipation-Max 1.8W Ta
Element Configuration Single
Turn On Delay Time 2.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 29mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 498pF @ 15V
Current - Continuous Drain (Id) @ 25°C 5.6A Ta
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Rise Time 3.9ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 1.9 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 498pF
Drain to Source Resistance 35mOhm
Rds On Max 29 mΩ

Dimensions

Height 1.65mm
Length 6.55mm
Width 3.55mm

Compliance

RoHS Status ROHS3 Compliant
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