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SI3442BDV-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 3A 6-TSOP
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Inventory: 14834
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.09576
≥1 USD $0.09576
≥10 USD $0.078803
≥100 USD $0.076808
≥500 USD $0.073815
≥1000 USD $0.07182
≥10000 USD $0.06384

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Dimensions

Height 1mm
Length 3.05mm
Width 1.65mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 57mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 860mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20mW
Turn On Delay Time 35 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 57m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 50 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3A
Drain to Source Breakdown Voltage 20V
Nominal Vgs 1.8 V

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