FQN1N50CTA

ON Semiconductor

RoHS

RoHS compliant

Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description Trans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Ammo

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Inventory: 364

Minimum: 1

Total Price: USD $0.55

Unit Price: USD $0.5544

≥1 USD $0.5544

≥10 USD $0.481404

≥100 USD $0.33301

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Box (TB)

Published 2013

Series QFET?

JESD-609 Code e3

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 3

ECCN Code EAR99

Resistance 6Ohm

Terminal Finish Tin (Sn)

Subcategory FET General Purpose Power

Technology MOSFET (Metal Oxide)

Terminal Position BOTTOM

Number of Elements 1

Power Dissipation-Max 890mW Ta 2.08W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Power Dissipation 890mW

Turn On Delay Time 10 ns

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 6 Ω @ 190mA, 10V

Vgs(th) (Max) @ Id 4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V

Current - Continuous Drain (Id) @ 25°C 380mA Tc

Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V

Rise Time 10 ns

Drive Voltage (Max Rds On,Min Rds On) 10V

Vgs (Max) ±30V

Fall Time (Typ) 10 ns

Turn-Off Delay Time 20 ns

Continuous Drain Current (ID) 380mA

Threshold Voltage 4V

Gate to Source Voltage (Vgs) 30V

Drain to Source Breakdown Voltage 500V

Feedback Cap-Max (Crss) 40 pF

Dimensions

Height 5.33mm

Length 5.2mm

Width 4.19mm

Physical

Mount Through Hole

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Pins 3

Weight 240mg

Transistor Element Material SILICON

Compliance

Radiation Hardening No

REACH SVHC No SVHC

RoHS Status ROHS3 Compliant

Lead Free Lead Free

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