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BUK9Y25-60E,115

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package SC-100, SOT-669
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description BUK9Y25-60E - N-channel 60 V, 25 mO logic level MOSFET in LFPAK56
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Inventory: 49343
Minimum: 1
Total Price: USD $0.61
Unit Price: USD $0.614418
≥1 USD $0.614418
≥10 USD $0.579642
≥100 USD $0.54683
≥500 USD $0.515876
≥1000 USD $0.486675
≥3000 USD $0.459123

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, TrenchMOS?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 65W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 65W
Case Connection DRAIN
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 12.1 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±10V
Fall Time (Typ) 10.4 ns
Turn-Off Delay Time 14.7 ns
Continuous Drain Current (ID) 34A
JEDEC-95 Code MO-235
Gate to Source Voltage (Vgs) 10V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 23.6 mJ

Compliance

RoHS Status ROHS3 Compliant

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