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SI5459DU-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? ChipFET? Single
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 8A CHIPFET
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Inventory: 3387
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.54516
≥1 USD $0.54516
≥10 USD $0.470316
≥100 USD $0.325433
≥500 USD $0.271952
≥1000 USD $0.231443

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? ChipFET? Single
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 52mOhm
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code R-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 10.9W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 6.7A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 665pF @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 15 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) -8A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6.7A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 20A

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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