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NTD3055L104T4G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R
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Inventory: 3125
Minimum: 1
Total Price: USD $0.7
Unit Price: USD $0.703262
≥1 USD $0.703262
≥10 USD $0.585136
≥100 USD $0.526072
≥500 USD $0.46701
≥1000 USD $0.388716
≥3000 USD $0.370861

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Dimensions

Height 2.38mm
Length 6.73mm
Width 6.22mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 104MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 1.5W Ta 48W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection DRAIN
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 6A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
Rise Time 104 ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 40.5 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 45A
Nominal Vgs 1.6 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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