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SI4532ADY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description VISHAY - SI4532ADY-T1-E3 - DUAL N/P CHANNEL MOSFET, 30V, SOIC
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Inventory: 2037
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.087668
≥1 USD $0.087668
≥10 USD $0.085089
≥100 USD $0.082511
≥500 USD $0.079288

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 80mOhm
Terminal Finish MATTE TIN
Max Power Dissipation 1.2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4532
Pin Count 8
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 8 ns
Power - Max 1.13W 1.2W
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 53m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 3.7A 3A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 9 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 10 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 4.9A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.7A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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