Operating Temperature -50°C~150°C TJ
Packaging Cut Tape (CT)
Published 2013
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.5W Ta 19W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 10V
Current - Continuous Drain (Id) @ 25°C 29.7A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 12.6A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 29.7A
DS Breakdown Voltage-Min 20V