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APTM120VDA57T3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 1.2KV 17A 20-Pin Case SP-3
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Series POWER MOS 7?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 390W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 390W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 684m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 5155pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 187nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 1200V 1.2kV
Fall Time (Typ) 45 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.684Ohm
Pulsed Drain Current-Max (IDM) 68A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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