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APTM20DHM16T3G

Microsemi Corporation
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 200V 104A 16-Pin Case SP-3
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
Series POWER MOS 7?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 390W
Number of Elements 2
Power Dissipation 390W
Turn On Delay Time 32 ns
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 19m Ω @ 52A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 64ns
Drain to Source Voltage (Vdss) 200V
Fall Time (Typ) 116 ns
Turn-Off Delay Time 88 ns
Continuous Drain Current (ID) 104A
Gate to Source Voltage (Vgs) 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

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