APTML202UM18R010T3AG

Microsemi Corporation

RoHS

Package SP3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Description Trans MOSFET N-CH 200V 109A 32-Pin Case SP-3

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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ

Packaging Bulk

Published 2012

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 10

ECCN Code EAR99

Subcategory FET General Purpose Power

Max Power Dissipation 480W

Terminal Position UPPER

Terminal Form UNSPECIFIED

Pin Count 25

JESD-30 Code R-XUFM-X10

Number of Elements 2

Operating Mode ENHANCEMENT MODE

Power Dissipation 480W

Case Connection ISOLATED

FET Type 2 N-Channel (Dual)

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 19m Ω @ 50A, 10V

Vgs(th) (Max) @ Id 4V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds 9880pF @ 25V

Current - Continuous Drain (Id) @ 25°C 109A Tc

Drain to Source Voltage (Vdss) 200V

Continuous Drain Current (ID) 109A

Gate to Source Voltage (Vgs) 30V

Drain-source On Resistance-Max 0.019Ohm

Pulsed Drain Current-Max (IDM) 400A

FET Technology METAL-OXIDE SEMICONDUCTOR

FET Feature Standard

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