APTM50DHM65T3G

Microsemi Corporation

RoHS

Package SP3

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Description Trans MOSFET N-CH 500V 51A 16-Pin Case SP-3

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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Compliance

Radiation Hardening No

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ

Packaging Bulk

Published 2012

Series POWER MOS 8?

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Subcategory FET General Purpose Power

Max Power Dissipation 390W

Number of Elements 2

Power Dissipation 390W

Turn On Delay Time 60 ns

FET Type 2 N-Channel (Dual) Asymmetrical

Rds On (Max) @ Id, Vgs 78m Ω @ 42A, 10V

Vgs(th) (Max) @ Id 5V @ 2.5mA

Input Capacitance (Ciss) (Max) @ Vds 10800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs 340nC @ 10V

Rise Time 70ns

Drain to Source Voltage (Vdss) 500V

Fall Time (Typ) 50 ns

Turn-Off Delay Time 155 ns

Continuous Drain Current (ID) 51A

Gate to Source Voltage (Vgs) 30V

FET Technology METAL-OXIDE SEMICONDUCTOR

FET Feature Standard

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