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RoHS
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Package 14-DIP
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET P-CH 30V 0.6A 14-Pin PDIP
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 14-DIP
Number of Pins 14
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Power Dissipation 2W
Terminal Position DUAL
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 4 P-Channel
Rds On (Max) @ Id, Vgs 2 Ω @ 1A, 12V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 15V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 600mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.6A
Drain-source On Resistance-Max 2Ohm
Pulsed Drain Current-Max (IDM) 2A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 60 pF
Turn Off Time-Max (toff) 30ns
Turn On Time-Max (ton) 30ns
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