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SIZ914DT-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 16A PWRPAIR
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON

Dimensions

Height 750μm
Length 6mm
Width 5mm

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 100W
Terminal Form NO LEAD
Reach Compliance Code unknown
Base Part Number SIZ914
JESD-30 Code R-PDSO-N6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Turn On Delay Time 40 ns
Power - Max 22.7W 100W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.4m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1208pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A 40A
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 127ns
Fall Time (Typ) 19 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 16A
Drain-source On Resistance-Max 0.0064Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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