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QJD1210SA2

Powerex Inc.
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 1200V 100A SIC
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 415W
Reach Compliance Code unknown
Power - Max 415W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 17m Ω @ 100A, 15V
Vgs(th) (Max) @ Id 1.6V @ 34mA
Input Capacitance (Ciss) (Max) @ Vds 8200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 330nC @ 15V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 100A
FET Feature Standard

Compliance

RoHS Status RoHS Compliant

Alternative Model

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