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IRFHE4250DTRPBF

Infineon Technologies
RoHS
/
Package 32-PowerWFQFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 25V 86A/303A PQFN
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Inventory: 9049
Minimum: 1
Total Price: USD $1.78
Unit Price: USD $1.78332
≥1 USD $1.78332

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 32-PowerWFQFN
Number of Pins 30

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series FASTIRFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 156W
Base Part Number IRFHE4250
Number of Elements 2
Element Configuration Dual
Power Dissipation 156W
Turn On Delay Time 17 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 2.75m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1735pF @ 13V
Current - Continuous Drain (Id) @ 25°C 86A 303A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 54ns
Drain to Source Voltage (Vdss) 25V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 303A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 16V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

Dimensions

Height 900μm
Length 6mm
Width 5mm

Alternative Model

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