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LN100LA-G

Microchip Technology
RoHS
RoHS RoHS compliant
Package 6-VFLGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 1200V Cascoded N-Channel MOSFET
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VFLGA
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -25°C~125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 350mW
Terminal Position BOTTOM
Terminal Form BUTT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Cascoded)
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 3000 Ω @ 2mA, 2.8V
Vgs(th) (Max) @ Id 1.6V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 3mA
Gate to Source Voltage (Vgs) 1.6V
Drain to Source Breakdown Voltage 600V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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