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NTMFD4C87NT3G

ON Semiconductor
RoHS
/
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 8DFN
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 1.1W
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 5.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11.7A 14.9A
Gate Charge (Qg) (Max) @ Vgs 22.2nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 14.9A
Drain Current-Max (Abs) (ID) 26.6A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard

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