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QJD1210011

Powerex Inc.
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 1200V 100A SIC
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Inventory: 1797
Minimum: 1
Total Price: USD $385.75
Unit Price: USD $385.752304
≥1 USD $385.752304
≥10 USD $374.406648
≥100 USD $363.060992
≥500 USD $348.878922

Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~175°C TJ
Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Max Power Dissipation 900W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
JESD-30 Code R-PUFM-X20
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 100A, 20V
Vgs(th) (Max) @ Id 5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 10200pF @ 800V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 500nC @ 20V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 100A
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 250A
DS Breakdown Voltage-Min 1200V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)

Alternative Model

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