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IPG20N06S415ATMA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N-CH 60V 20A
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series Automotive, AEC-Q101, OptiMOS?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 50W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12 ns
Power - Max 50W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 15.5m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 2260pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Rise Time 2ns
Fall Time (Typ) 9 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0155Ohm
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Alternative Model
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