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Package 8-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Supplier Device Package 8-DFN (3x3)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.4W
Power - Max 1.4W
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 20mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.6A 8.1A
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 8.1A
Input Capacitance 460pF
FET Feature Logic Level Gate
Rds On Max 20 mΩ

Compliance

RoHS Status RoHS Compliant
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