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ZXMN3A02X8TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 30V N Chnl UMOS
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Inventory: 846
Minimum: 1
Total Price: USD $1.37
Unit Price: USD $1.36752
≥1 USD $1.36752
≥10 USD $1.121736
≥100 USD $0.872533
≥500 USD $0.739551

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Weight 139.989945mg
Transistor Element Material SILICON

Dimensions

Height 950μm
Length 3.1mm
Width 3.1mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6.7A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1.1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.8W
Turn On Delay Time 3.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.3A Ta
Gate Charge (Qg) (Max) @ Vgs 26.8nC @ 10V
Rise Time 5.5 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 6.7A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.3A
Drain to Source Breakdown Voltage 30V

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