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IRFPE30

Vishay Siliconix
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 4.1A TO-247AC
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Inventory: 6456
Minimum: 1
Total Price: USD $41.9
Unit Price: USD $41.904975
≥1 USD $41.904975
≥10 USD $34.383825
≥100 USD $33.309518
≥500 USD $32.234213
≥1000 USD $31.159905

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g

Dimensions

Height 20.7mm
Length 15.87mm
Width 5.31mm

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 4.1A
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 4.1A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.3nF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω

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