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RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 200V 11A TO-220AB
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Inventory: 232096
Minimum: 1
Total Price: USD $0.6
Unit Price: USD $0.5985
≥1 USD $0.5985
≥10 USD $0.49077
≥100 USD $0.475808
≥500 USD $0.459848
≥1000 USD $0.444885

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -11A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 13 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time 43ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.2nF
Drain to Source Resistance 500mOhm
Rds On Max 500 mΩ

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm
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