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IRFBF20

Vishay Siliconix
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 900V 1.7A TO-220AB
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Inventory: 3972
Minimum: 1
Total Price: USD $0.73
Unit Price: USD $0.72618
≥1 USD $0.72618
≥10 USD $0.596505
≥100 USD $0.577553
≥500 USD $0.5586
≥1000 USD $0.540645

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 54W Tc
Element Configuration Single
Power Dissipation 54W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 21ns
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 900V
Input Capacitance 490pF
Drain to Source Resistance 8Ohm
Rds On Max 8 Ω

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm

Compliance

RoHS Status Non-RoHS Compliant

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