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IRL510
Vishay SiliconixRoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5.6A TO-220AB
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Inventory: 5071
Minimum: 1
Total Price: USD $0.44
Unit Price: USD $0.435908
≥1 USD $0.435908
≥10 USD $0.358103
≥100 USD $0.346133
≥500 USD $0.33516
≥1000 USD $0.324188
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 43W Tc
Element Configuration Single
Power Dissipation 43W
Turn On Delay Time 9.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 540mOhm @ 3.4A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.6A Tc
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 5.6A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 100V
Input Capacitance 250pF
Drain to Source Resistance 540mOhm
Rds On Max 540 mΩ
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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