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RoHS
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Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 2A TO-220D
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2004
JESD-609 Code e6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Current Rating 2A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 20V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 2A
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 7Ohm
Pulsed Drain Current-Max (IDM) 4A
Avalanche Energy Rating (Eas) 15 mJ

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead
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