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IRLMS6702TR

Infineon Technologies
RoHS
/
Package SOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 2.4A 6-TSOP
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant

Technical

Packaging Cut Tape (CT)
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 2.3A
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 13A
DS Breakdown Voltage-Min 20V

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