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IXFX120N20

IXYS
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 120A PLUS247
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Resistance 17MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 120A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 560W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 65 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 480A
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