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IXFH58N20Q

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RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 58A TO-247AD
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Inventory: 5648
Minimum: 1
Total Price: USD $4.08
Unit Price: USD $4.076626
≥1 USD $4.076626
≥10 USD $3.845876
≥100 USD $3.628187
≥500 USD $3.422815
≥1000 USD $3.229079

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Resistance 40MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 58A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 1000 mJ

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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