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IRF744

Vishay Siliconix
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 450V 8.8A TO-220AB
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Turn On Delay Time 8.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 630mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 450V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.4nF
Drain to Source Resistance 630mOhm
Rds On Max 630 mΩ
Nominal Vgs 4 V

Compliance

REACH SVHC Unknown
RoHS Status Non-RoHS Compliant

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm

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