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IRF614

Vishay Siliconix
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 250V 2.7A TO-220AB
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Inventory: 806
Minimum: 1
Total Price: USD $0.41
Unit Price: USD $0.40656
≥1 USD $0.40656

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 36W Tc
Element Configuration Single
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.7A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 7.6ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 2.7A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 140pF
Drain to Source Resistance 2Ohm
Rds On Max 2 Ω

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