Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Vgs (Max) ±12V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.0075Ohm
Pulsed Drain Current-Max (IDM) 120A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 200 mJ