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IRFB11N50A

Vishay Siliconix
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 11A TO-220AB
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Inventory: 3473
Minimum: 1
Total Price: USD $1.45
Unit Price: USD $1.45236
≥1 USD $1.45236
≥10 USD $1.192013
≥100 USD $1.154108
≥500 USD $1.1172
≥1000 USD $1.080293

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Weight 6.000006g

Dimensions

Height 9.01mm
Length 10.41mm
Width 4.7mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 170W Tc
Element Configuration Single
Power Dissipation 170W
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 520mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1423pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 1.423nF
Drain to Source Resistance 520mOhm
Rds On Max 520 mΩ

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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