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IRFD010

Vishay Siliconix
RoHS
/
Package 4-DIP (0.300, 7.62mm)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 50V 1.7A 4-DIP
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Inventory: 1180
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.42294
≥1 USD $0.42294
≥10 USD $0.34713
≥100 USD $0.336158
≥500 USD $0.326183
≥1000 USD $0.31521

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Weight 639.990485mg

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 50V
Technology MOSFET (Metal Oxide)
Current Rating 1.7A
Number of Channels 1
Power Dissipation-Max 1W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 860mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 1.7A
Drain to Source Breakdown Voltage 50V
Input Capacitance 250pF
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ

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